In this study, (SnO2-xFx) thin films where (x = 0, 0.02, 0.04, 0.06 and 0.08) have been deposited by chemical spray pyrolysis method on glass substrates at temperature of (400°C), using Tin Chloride Pentahydrate (SnCl4.5H2O) and Ammonium Fluoride (NH4F) solutions. The structural properties and morphology of these films have been studied using XRD and AFM respectively. XRD analysis showed that these films are polycrystalline in nature with tetragonal Rutile structure with preferred orientation of (110). Doping with Fluorine causes a decrease in the crystallite size. The optical properties for all the films were studied by recording the transmittance and absorbance spectra in the range of (300-900) nm. The results showed that the absorbance increases with increasing the doping percentage. The optical energy gap for allowed direct electronic transition was calculated and it was found that the thin film with 0.08 doping percentage has the least value of 3.72 eV. Urbach energy decreases with increasing doping percentage. The optical constants (absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant) as a function of photon energy for all prepared films were calculated.
| Published in | Advances in Materials (Volume 5, Issue 4) |
| DOI | 10.11648/j.am.20160504.12 |
| Page(s) | 23-30 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2016. Published by Science Publishing Group |
(SnO2) Thin Films, Fluorine Doping, Chemical Spray Pyrolysis, XRD, Optical Properties
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APA Style
Nabeel A. Bakr, Sabah A. Salman, Mohammed N. Ali. (2016). Effect of Fluorine Doping on Structural and Optical Properties of SnO2 Thin Films Prepared by Chemical Spray Pyrolysis Method. Advances in Materials, 5(4), 23-30. https://doi.org/10.11648/j.am.20160504.12
ACS Style
Nabeel A. Bakr; Sabah A. Salman; Mohammed N. Ali. Effect of Fluorine Doping on Structural and Optical Properties of SnO2 Thin Films Prepared by Chemical Spray Pyrolysis Method. Adv. Mater. 2016, 5(4), 23-30. doi: 10.11648/j.am.20160504.12
AMA Style
Nabeel A. Bakr, Sabah A. Salman, Mohammed N. Ali. Effect of Fluorine Doping on Structural and Optical Properties of SnO2 Thin Films Prepared by Chemical Spray Pyrolysis Method. Adv Mater. 2016;5(4):23-30. doi: 10.11648/j.am.20160504.12
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Download@article{10.11648/j.am.20160504.12,
author = {Nabeel A. Bakr and Sabah A. Salman and Mohammed N. Ali},
title = {Effect of Fluorine Doping on Structural and Optical Properties of SnO2 Thin Films Prepared by Chemical Spray Pyrolysis Method},
journal = {Advances in Materials},
volume = {5},
number = {4},
pages = {23-30},
doi = {10.11648/j.am.20160504.12},
url = {https://doi.org/10.11648/j.am.20160504.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20160504.12},
abstract = {In this study, (SnO2-xFx) thin films where (x = 0, 0.02, 0.04, 0.06 and 0.08) have been deposited by chemical spray pyrolysis method on glass substrates at temperature of (400°C), using Tin Chloride Pentahydrate (SnCl4.5H2O) and Ammonium Fluoride (NH4F) solutions. The structural properties and morphology of these films have been studied using XRD and AFM respectively. XRD analysis showed that these films are polycrystalline in nature with tetragonal Rutile structure with preferred orientation of (110). Doping with Fluorine causes a decrease in the crystallite size. The optical properties for all the films were studied by recording the transmittance and absorbance spectra in the range of (300-900) nm. The results showed that the absorbance increases with increasing the doping percentage. The optical energy gap for allowed direct electronic transition was calculated and it was found that the thin film with 0.08 doping percentage has the least value of 3.72 eV. Urbach energy decreases with increasing doping percentage. The optical constants (absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant) as a function of photon energy for all prepared films were calculated.},
year = {2016}
}
TY - JOUR T1 - Effect of Fluorine Doping on Structural and Optical Properties of SnO2 Thin Films Prepared by Chemical Spray Pyrolysis Method AU - Nabeel A. Bakr AU - Sabah A. Salman AU - Mohammed N. Ali Y1 - 2016/08/17 PY - 2016 N1 - https://doi.org/10.11648/j.am.20160504.12 DO - 10.11648/j.am.20160504.12 T2 - Advances in Materials JF - Advances in Materials JO - Advances in Materials SP - 23 EP - 30 PB - Science Publishing Group SN - 2327-252X UR - https://doi.org/10.11648/j.am.20160504.12 AB - In this study, (SnO2-xFx) thin films where (x = 0, 0.02, 0.04, 0.06 and 0.08) have been deposited by chemical spray pyrolysis method on glass substrates at temperature of (400°C), using Tin Chloride Pentahydrate (SnCl4.5H2O) and Ammonium Fluoride (NH4F) solutions. The structural properties and morphology of these films have been studied using XRD and AFM respectively. XRD analysis showed that these films are polycrystalline in nature with tetragonal Rutile structure with preferred orientation of (110). Doping with Fluorine causes a decrease in the crystallite size. The optical properties for all the films were studied by recording the transmittance and absorbance spectra in the range of (300-900) nm. The results showed that the absorbance increases with increasing the doping percentage. The optical energy gap for allowed direct electronic transition was calculated and it was found that the thin film with 0.08 doping percentage has the least value of 3.72 eV. Urbach energy decreases with increasing doping percentage. The optical constants (absorption coefficient, refractive index, extinction coefficient, real and imaginary parts of dielectric constant) as a function of photon energy for all prepared films were calculated. VL - 5 IS - 4 ER -
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